Research on ZnO/Si heterojunction solar cells  

作　　者：Li Chen Xinliang Chen Yiming Liu Ying Zhao Xiaodan Zhang 

机构地区：[1]Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China [2]Tianjin Key laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China [3]Key laboratory of Opto-electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China [4]Mads Clausen Institute, University of Southern Denmark, Alsion 2, DK-6400 Sonderborg, Denmark

出　　处：《Journal of Semiconductors》2017年第5期62-72,共11页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707);the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900);the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100);the National High Technology Research and Development Program of China(No.2013AA050302);the Fundamental Research Funds for the Central Universities(No.65010341)

摘　　要：We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane（B2H6） flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.

关 键 词：textured surface ZnO films p-type c-Si substrates MOCVD technique AFORS-HET software solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]