Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films  

作　　者：Yu Feng Can Wang ShiLu Tian Yong Zhou Chen Ge HaiZhong Guo Meng He KuiJuan Jin GuoZhen Yang 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2017年第6期69-73,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921002, and 2013CBA01703);the National Natural Science Foundation of China (Grant Nos. 11174355, 11674385, and 11574365);the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07030200)

摘　　要：BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.BiFeO3 （BFO） thin films with BaTiO3 （BTO） or SrTiO3 （STO） as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.

关 键 词：BFO buffer layer strain 

分 类 号：O484[理学—固体物理]