Rapid growth of angle-confined large-domain graphene bicrystals  

作　　者：Huaying Ren Huan Wang Li Lin Miao Tang Shuli Zhao Bing Deng Manish Kumar Priydarshi Jincan Zhang Hailin Peng Zhongfan Liu 

机构地区：[1]Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China [2]Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

出　　处：《Nano Research》2017年第4期1189-1199,共11页纳米研究（英文版）

基　　金：Acknowledgements We acknowledge financial support from the National Natural Science Foundation of China （Nos. 21173004, 51520105003, 51432002, 21222303 and 51362029） and the National Basic Research Program of China （Nos. 2014CB932500, 2013CB932603, 2012CB933404, 2011CB933003, and 2011CB921904）, the National Program for Support of Top-Notch Young Professionals, and Beijing Municipal Science ＆ Technology Commission （No. Z161100002116002）.

摘　　要：In the chemical vapor deposition growth of large-area graphene polycrystalline thin films, the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries （GBs）. The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains, which can significantly affect the performance of the graphene films and impede their industrial applications. Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation. Although the bicrystal has been widely investigated for traditional bulk materials, no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals. In this stud34 we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu （100） substrate. Control of the density of the GBs with a miso- rientation angle of 30° was realized via the controllable rapid growth of sub- centimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment. The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.In the chemical vapor deposition growth of large-area graphene polycrystalline thin films, the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries （GBs）. The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains, which can significantly affect the performance of the graphene films and impede their industrial applications. Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation. Although the bicrystal has been widely investigated for traditional bulk materials, no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals. In this stud34 we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu （100） substrate. Control of the density of the GBs with a miso- rientation angle of 30° was realized via the controllable rapid growth of sub- centimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment. The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.

关 键 词：GRAPHENE BICRYSTAL chemical vapor deposition surface engineering grain boundary heating device 

分 类 号：O[理学]