聚焦重离子束溅射制备同位素靶的材料利用率及均匀性研究  

Material Utilization and Uniformity of Isotopic Target Prepared by Focused Heavy Ion Beam Sputtering

作　　者：樊启文[1] 杜英辉[1] 张榕[1] 王华[1] 

机构地区：[1]中国原子能科学研究院核物理研究所,北京102413

出　　处：《原子能科学技术》2017年第5期942-948,共7页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(11205251;U1432246)

摘　　要：研究了聚焦重离子束溅射制备同位素靶的材料利用率和均匀性。通过实验确定了两种溅射距离(7 mm和14 mm)下沉积靶的纵向和横向厚度分布,确定了提高靶均匀性的有效方法——基衬公转和沉积1/2厚度后基衬调头,确定了匹配材料利用率和均匀性的最佳几何参数。制备了5种同位素氧化物靶和9种高熔点金属同位素靶,应用于核物理测量实验。实验表明,源-衬距离为7 mm和14 mm时,在9 mm×10 mm成膜区域内,基衬中心距靶(源)材料水平界面垂直距离为9 mm和11 mm时可获得均匀的靶膜和最高的材料利用率。The material utilization and uniformity of isotopic target prepared by focused heavy ion beam sputtering were studied. The longitudinal and transverse thickness distributions were determined for two sputtering distances （7 mm and 14 mm）. The effective means of improving the uniformity, such as substrates revolution and reversing for the half thickness were obtained by experimental measurement. The optimum geo- metric parameters for matching material utilization and uniformity were got. Five isotopic oxide targets and nine high-melting-point metal isotopic targets applied to the experiment of nuclear physics were prepared by focused heavy ion beam sputtering. For the source-substrate distances of 7 mm and 14 mm and an area of 9 mm× 10 mm on a target, the experiment results indicate that the maximum material utilization and uniformity can be obtained if the vertical distances between the substrate center and the target area are 9 mm and 11 ram, respectively.

关 键 词：聚焦重离子束溅射 同位素靶 均匀性 材料利用率 

分 类 号：O484.1[理学—固体物理]