磁控溅射制备Al掺杂氮化铜薄膜研究  

Study on the Al doped Cu_3N films prepared by magnetron sputtering

作　　者：袁作彬[1] 左安友[1] 李兴鳌[2] 

机构地区：[1]湖北民族学院理学院,湖北恩施445000 [2]南京邮电大学材料科学与工程学院,南京210046

出　　处：《功能材料》2017年第5期5180-5184,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51172110);湖北省教育厅基金项目(B20082902)

摘　　要：利用磁控共溅射方法在玻璃基底上制备出了Al掺杂Cu_3N薄膜,研究了其晶体结构、表面形貌、光学特性和电学特性。XRD结果表明Al掺杂没有引起峰位的明显变化,说明Al替代了Cu的位置或者进入晶界处,并且随掺杂含量升高,结晶度降低;扫描电子显微镜图像表明Al掺杂之后使得氮化铜晶粒形状变得不规则,晶界变得模糊,说明Al掺杂会抑制氮化铜晶体的生长;通过光学透射谱计算得到光学带隙,Al掺杂降低了氮化铜薄膜的光学带隙,并随着掺杂含量的增加而逐渐减小,实现了Al掺杂氮化铜薄膜光学带隙的连续可调,带隙减小源于Al外层电子的局域态进入氮化铜的带隙间,增加了中间态。同时四探针的测试也表明掺杂之后电阻率变小。Al doped Cu3N films were prepared on glass substrate by reactive magnetron co sputtering, and the structure, morphology, optical and electronic properties of Al doped Cu3N films were studied. According to XRD results, the site of peaks have not been changed obviously, which indicates that Al could substitute for Cu or turn into the grains boundary. With the increase of Al doped concentration, the crystallization of Cu3 N films gradually decreases. SEM shows that the shape of crystal grains has been varied to irregular after doping with AU and the grain boundary of films has been confused 9 which can be demonstrated that Al restrained the growth of Cu3N crystals. The optical energy gap of Cu3N films are becoming smaller with the increase of Al doping content, which make clear adjustable optical energy gap. The decreasing gap may be attributed to the localized states of Al into band gap of Cu3N. Simultaneously, the re-sistivity grows to smaller after doping with Al.

关 键 词：氮化铜 薄膜 AL掺杂 光学特性 电学特性 

分 类 号：O484.1[理学—固体物理]