基于微孔硅阵列的像素化γ-CuI闪烁转换屏的研制及性能表征  

Fabrication and Performance of Pixelated γ-CuI Scintillation Conversion Screens Based on Oxidized Silicon Micropore Arrays

作　　者：孙寿强[1] 顾牡[1] 陈婷婷[1] 张娟楠[1] 刘小林[1] 刘波[1] 黄世明[1] 倪晨[1] 

机构地区：[1]同济大学物理科学与工程学院上海市特殊人工微结构材料与技术重点实验室,上海200092

出　　处：《光谱学与光谱分析》2017年第5期1566-1570,共5页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金项目(11475128;11375129;11475127);科学技术部国家重大科学仪器设备开发专项(2011YQ13001902)资助

摘　　要：以微孔硅阵列为模板,高纯CuI粉末为原料,采用压力注入法,成功制备了具有单分散微柱结构的像素化CuI闪烁转换屏。扫描电子显微镜(SEM)与X射线衍射(XRD)的测试结果表明,所制备的转换屏中CuI微柱连续、致密,微柱柱径约为2.5μm、间隔约为1.5μm、柱长约为80μm,并具有良好的γ相晶体结构。在X射线激发下,所制备的像素化γ-CuI闪烁转换屏具有峰值波长位于680nm附近的红光慢发射带;掺碘后,该发射带被较大幅度的抑制,同时出现了峰值波长位于432nm的快发光峰;当碘掺杂含量达到10Wt%时,峰值波长位于680nm附近的红光慢发射带被完全抑制,只存在峰值波长位于432nm的快发光峰。采用刃边法测量了所制备的像素化γ-CuI闪烁屏的空间分辨率,结果显示其分辨率可达38lp·mm-1,表明该闪烁屏除拥有超快时间响应特性外,兼具很高的空间分辨本领,在X射线成像方面具有独特的应用价值。The pixelated CuI scintillation conversion screens which have a monodisperse micro-columnar structure were fabricated with pressure-injection method using the high-purity CuI powder and oxidized silicon micropore arrays.The results of scanning electron microscopy and X-ray diffraction show that CuI micro-columns are continuous and dense with the crystal lattice of（-phases.Their diameters,spaces and depths are about 2.5,1.5and 80μm,respectively.X-ray excited luminescence（XEL）reveals that the as-preparedγ-CuI scintillation screens have an emission band near 680 nm,which has a comparatively slow decay time.After iodine-doping especially at the content of 10 Wt%,the emission band near 680 nm is effectively suppressed with an emission peak at 432 nm,which has an ultra-fast decay time.The spatial resolution of the pixelatedγ-CuI scintillation conversion screens was measured with knife-edge method.The result shows that the resolution can reach to 38lp·mm-1,which indicate that the pixelatedγ-CuI scintillation screens have excellent spatial resolution with ultra-fast time response and it possess a unique value in X-ray imaging.

关 键 词：像素化γ-CuI闪烁转换屏 微柱结构 闪烁性能 空间分辨率 

分 类 号：O482.3[理学—固体物理]