40纳米MOSFET毫米波等效电路的弱反区关键参数提取  

Key parameter extraction of the millimeter-wave equivalent circuit of 40nm MOSFET in weak inversion

作　　者：王林[1] 王军[1] 王丹丹[1] 

机构地区：[1]西南科技大学信息工程学院,绵阳621010

出　　处：《四川大学学报（自然科学版）》2017年第3期523-528,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(69901003)

摘　　要：以双端口网络的分析方法为依托,对40纳米MOSFET的毫米波小信号等效电路的弱反区参数进行提取.该等效电路基于准静态逼近,包括完整的本征准静态MOSFET模型、串联的栅极电阻、源极电阻、漏极电阻以及衬底耦合网络.元件参数提取分为寄生参数提取和本征部分提取,是通过其等效电路的开路短路法来简化等效电路以及分析Y参数所得,提取的结果具有物理意义以及其方法能够去嵌寄生效应,如器件衬底耦合.In this pap 40nm MOS transisto method in millimeter tion, which includes sistance, drain resist into parasitic parame simplifying the equiv physically meaningfu er,an efficient parameter extraction method of the small signal equivalent circuit of rs on the weak-inversion region are presented by using two-port network analysis wave frequency bands. The equivalent circuit is based on a quasi-static approxima- the complete intrinsic quasi-static MOS model, the series gate resistance, source re- ance and a substrate coupling network. Device parameters extraction which divided ter extraction and intrinsic part extraction is performed by Y-parameter analysis on alent circuit for the way of OPEN and SHORTstructures. The extracted results are 1 and can be used to de-embed the extrinsic effects such as the substrate coupling .

关 键 词：二端口网络 40纳米MOSFET 弱反区 毫米波 参数提取 

分 类 号：TN386.1[电子电信—物理电子学]