微腔介质阻挡放电忆阻特性分析  

Research on characteristic of memory of microcavity dielectric barrier discharge

作　　者：杨慧彬 孙岩洲[1] 苏大体 

机构地区：[1]河南理工大学电气工程与自动化学院,焦作454000

出　　处：《电子测量技术》2017年第4期30-33,50,共5页Electronic Measurement Technology

基　　金：国家自然科学及河南人才培养联合基金"基于微电极结构的介质阻挡放电及等离子体三极管研究"(U1204506)

摘　　要：为了研究微腔结构介质阻挡放电的非线性电阻特性,搭建微腔结构介质阻挡放电的仿真模型,研究其放电过程中的电压和电流关系从而得到其伏安特性曲线。根据忆阻器数学模型及忆阻器物理模型,建立忆阻器的MATLAB仿真平台。应用阻变机理对忆阻器的伏安特性进行分析并与介质阻挡放电的伏安特性进行比较,发现微腔介质阻挡放电过程中的伏安特性与忆阻器的忆阻特性相似。从电荷转移角度进一步分析微腔介质阻挡放电过程中的忆阻特性。In order to study the nonlinear resistance characteristics of microcavity dielectric barrier discharge.Building the simulation model of microcavity dielectric barrier discharge to study the relationship between voltage and current in the process of discharge and its volt ampere characteristic curve was obtained.The MATLAB simulation platform of the memristor was built according to the mathematical model of the memristor and the physical model.By using the resistance mechanism,the volt ampere characteristics of the memristor were analyzed and compared with the volt ampere characteristics of dielectric barrier discharge,we found that the volt-ampere characteristics of microcavity dielectric barrier discharge is similar to characteristic of memory resistor by analyzing the characteristics.The characteristic of memory resistor in microcavity dielectric barrier discharge was further analyzed from the point of view of charge transfer.

关 键 词：介质阻挡放电 忆阻器 伏安特性 忆阻特性 

分 类 号：TN911.7[电子电信—通信与信息系统]