铜-二氧化硅凝胶薄膜的电化学制备及其光学性能  

Electrochemical preparation and optical properties of copper–silica thin film

作　　者：冯砚艳[1] 王星星[1] 辜敏[1] 

机构地区：[1]煤矿灾害动力学与控制国家重点实验室,重庆大学资源及环境科学学院,重庆400044

出　　处：《电镀与涂饰》2017年第9期462-467,共6页Electroplating & Finishing

摘　　要：以CuCl_2·2H_2O和正硅酸乙酯(TEOS)作为前驱体,配制了透明稳定的Cu^(2+)–SiO_2复合溶胶。采用循环伏安法研究了Cu^(2+)在该溶胶中的电化学性质,以恒电位法在氧化铟锡(ITO)导电玻璃表面沉积了凝胶复合薄膜。采用扫描电镜、能谱、X射线衍射对复合薄膜进行了表征,以紫外-可见光谱测试了薄膜的线性光学性能。结果表明,控制电位在-0.24~0.2 V和负于-0.24 V(相对于饱和甘汞电极)可分别制备出Cu^+–SiO_2和Cu–SiO_2凝胶薄膜,前者的平均光学带隙宽度(Eg)为1.94 e V,略高于后者的1.92 eV。由于Cu在溶胶中是连续成核,导致了Cu–SiO_2凝胶薄膜中的Cu颗粒大小不均匀(在几十纳米至几微米之间),吸收光谱在400~500 nm出现了Cu带间迁移的吸收峰。A transparent and stable Cu2＋-SiO2 composite sol was prepared with CuCl2·2H2O and tetraethyl orthosilicate （TEOS） as precursors. The electrochemical behavior of Cu2＋ in the composite sol was studied by cyclic voltammetry. Some composite thin films were prepared on ITO （indium tin oxide） conductive glass by potentiostatic electrodeposition and characterized by scanning electron microscopy, energy-dispersive spectrometry and X-ray diffraction. The linear optical properties of the as-prepared thin films were measured by ultraviolet-visible spectroscopy. It was found that the Cu＋-SiO2 and Cu-SiO2 composite thin films were prepared at a potential ranging from -0.24 V to 0.2 V and more negative than -0.24 V （all potentials are with respect to a saturated calomel electrode）, respectively. The average optical bandgap （Eg） of Cu＋-SiO2 thin film is 1.94 eV, which is larger than that of Cu-SiO2 thin film （1.92 eV）. The size of Cu particles in Cu-SiO2 thin film is not uniform （from tens of nanometer to several micron） due to its progressive nucleation. The broad absorption band in the region of 400-500 nm is present, which is related to the interband transition of metallic copper.

关 键 词：二氧化硅溶胶 铜 复合薄膜 氧化铟锡 恒电位电沉积 循环伏安法 紫外-可见光谱 光学带隙 

分 类 号：Q646[生物学—生物物理学]