弱磁场AMR薄膜磁传感优化分析与测试  

Optimization Analysis and Test on AMR Thin Film Sensor in Weak Magnetic Field

作　　者：樊之琼 张晓明 吕忆玲 毕钰[1] 

机构地区：[1]中北大学,电子测试技术重点实验室,山西太原030051 [2]中北大学,仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2017年第5期1-4,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金项目(51375463)

摘　　要：文中针对微型AMR传感器对弱磁场测量灵敏度及线性度低的问题,对微磁传感器磁电阻形状进行了分析,利用ANSYS软件仿真设计了相应的磁传感器并试验验证。仿真试验表明:设计的微型AMR薄膜传感器具有很好的线性度和灵敏度,可用于提高弱磁场的测量精度。改变电极结构,采用Barber偏置电极,AMR传感器的线性度在偏置角为45°时最优;将磁阻两端设计为尖角模型,使得磁电阻条沿薄膜表面长度方向的磁各向异性增强,提高了传感器的灵敏度。Micro-anisotropic magnetoresistance （AMR）thin-film sensor can be regarded as the main sensor to detect the magnetic＇field.The problem that low sensitivity and low linearity of external magnetic sensor for weak magnetic field was low in this paper .The magnetoresistance shape of the micro-magnetic sensor was analyzed, ANSYS software was used to simulate corresponding magnetic sensor, then results were verified by experiments.Experiments show that the designed thin film sensor has good magnetic field linearity and sensitivity, which can be used to improve the measurement accuracy of weak magnetic field.Changing electrode structure, using the Barber bias electrode,the linearity of the AMR sensor is optimized when offset angle is 45°. Designing magnetic resistance for the angle model at both ends,the magnetic anisotropy of the strip is enhanced along the length direction of the film surface,thus improving the sensitivity of the sensor.The results of this research can provide a reference for the structure design and optimization of micro-anisotropic magnetoresistance （AMR）thin-film sensor.

关 键 词：ANSYS仿真 Barber电极 线性度 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]