Influences of different oxidants on characteristics of La_2O_3/Al_2O_3 nanolaminates deposited by atomic layer deposition  

作　　者：樊继斌 刘红侠 段理 张研 于晓晨 

机构地区：[1]School of Materials Science and Engineering,Chang’an University [2]School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University

出　　处：《Chinese Physics B》2017年第6期395-400,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51501017);the Fundamental Research Funds for the Central Universities,China(Grant No.310831161003)

摘　　要：A comparative study of two kinds of oxidants（H2O and O3） with the combination of two metal precursors（TMA and La（～iPrCp）3） for atomic layer deposition（ALD） La2O3/Al2O3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied. Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O3-based La2O3/Al2O3 nanolaminates indicate that O3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.A comparative study of two kinds of oxidants（H2O and O3） with the combination of two metal precursors（TMA and La（～iPrCp）3） for atomic layer deposition（ALD） La2O3/Al2O3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied. Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O3-based La2O3/Al2O3 nanolaminates indicate that O3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.

关 键 词：La2O3/Al2O3 nanolaminates atomic layer deposition OXIDANTS ANNEALING 

分 类 号：TB332[一般工业技术—材料科学与工程]