Magnesium incorporation efficiencies in Mg_xZn_(1-x)O films on ZnO substrates grown by metalorganic chemical vapor deposition  

作　　者：胡启昌 丁凯 

机构地区：[1]College of Mechanical and Electronic Engineering,Fujian Agriculture and Forestry University [2]Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2017年第6期465-470,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61474121);and the Major Scientific Project of Fujian Province,China(Grant No.2014NZ0002-2)

摘　　要：We investigate the magnesium（Mg） incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition（MOCVD） technique. In order to deposit high quality MgxZn1-xO films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope（AFM）. The AFM, scanning electron microscope（SEM）,and x-ray diffraction（XRD） studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard＇s law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high Ⅵ/Ⅱratio are good for obtaining high Mg content.We investigate the magnesium（Mg） incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition（MOCVD） technique. In order to deposit high quality MgxZn1-xO films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope（AFM）. The AFM, scanning electron microscope（SEM）,and x-ray diffraction（XRD） studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard＇s law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high Ⅵ/Ⅱratio are good for obtaining high Mg content.

关 键 词：MGXZN1-XO MOCVD incorporation efficiency ZnO bulk crystal 

分 类 号：TB383.2[一般工业技术—材料科学与工程]