Influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H(n)/c-Si(p)heterojunction solar cells  

作　　者：乔治 冀建利 张彦立 刘虎 李同锴 

机构地区：[1]Institue of Applied Physics, Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

出　　处：《Chinese Physics B》2017年第6期534-540,共7页中国物理B（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(Grant No.2012AA050301);Scientific Research of Hebei Education Department,China(Grant No.QN2017135)

摘　　要：P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.

关 键 词：silicon heterojunction solar cells interface states band offset front contact 

分 类 号：TM914.4[电气工程—电力电子与电力传动]