Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate  被引量:1

Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate

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作  者:Minjie Liu Gaoshan Huang Ping Feng Qinglei Guo Feng Shao Ziao Tian Gongjin Li Qing Wan Yongfeng Mei 

机构地区:[1]Department of Materials Science,Fudan University [2]School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University

出  处:《Journal of Semiconductors》2017年第6期79-83,共5页半导体学报(英文版)

基  金:Project supported by the National Natural Science Foundation of China(No.51322201);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20120071110025);Science and Technology Commission of Shanghai Municipality(No.14JC1400200)

摘  要:Silicon nanomembrane(SiNM)transistors gated by chitosan membrane were fabricated on plastic substrate to mimic synapse behaviors.The device has both a bottom proton gate(BG)and multiple side gates(SG).Electrical transfer properties of BG show hysteresis curves different from those of typical SiO2 gate dielectric.Synaptic behaviors and functions by linear accumulation and release of protons have been mimicked on this device:excitatory post-synaptic current(EPSC)and paired pulse facilitation behavior of biological synapses were mimicked and the paired-pulse facilitation index could be effectively tuned by the spike interval applied on the BG.Synaptic behaviors and functions,including short-term memory and long-term memory,were also experimentally demonstrated in BG mode.Meanwhile,spiking logic operation and logic modulation were realized in SG mode.Silicon nanomembrane(SiNM)transistors gated by chitosan membrane were fabricated on plastic substrate to mimic synapse behaviors.The device has both a bottom proton gate(BG)and multiple side gates(SG).Electrical transfer properties of BG show hysteresis curves different from those of typical SiO2 gate dielectric.Synaptic behaviors and functions by linear accumulation and release of protons have been mimicked on this device:excitatory post-synaptic current(EPSC)and paired pulse facilitation behavior of biological synapses were mimicked and the paired-pulse facilitation index could be effectively tuned by the spike interval applied on the BG.Synaptic behaviors and functions,including short-term memory and long-term memory,were also experimentally demonstrated in BG mode.Meanwhile,spiking logic operation and logic modulation were realized in SG mode.

关 键 词:silicon nanomembrane chitosan membrane excitatory post-synaptic current 

分 类 号:TN325.2[电子电信—物理电子学]

 

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