基于有限元方法的有机薄膜晶体管性能分析  

Simulation of organic thin-film transistor based on finite element method

作　　者：陈跃宁[1] 李琳[1] 徐征[2] 张成文[2] CHEN Yuening LI Lin XU Zheng ZHANG Chengwen(Physics Department, Liaoning University, Shenyang 110036, China Institute of Optoeleetronics Technology, Beijing Jiaotong University, Beijing 100044, China)

机构地区：[1]辽宁大学物理学院,沈阳1100361 [2]北京交通大学光电子技术研究所,北京100044

出　　处：《沈阳师范大学学报（自然科学版）》2017年第2期129-132,共4页Journal of Shenyang Normal University:Natural Science Edition

基　　金：国家自然科学基金资助项目(11474018;61575019);国家重点研发计划(2016YFB0401302);辽宁省教育厅科学研究一般项目(L2014003)

摘　　要：有机薄膜晶体管(organic thin film transistor,OTFT)是一种以有机半导体材料作为有源层的晶体管,是有机电子学的重要研究内容之一。近年来,人们在实验的基础上得到了一些OTFT的基本特性。旨在从基本的物理模型和数学模型出发,通过有限元方法对顶栅底接触式的OTFT器件进行模拟,从而在理论上将OTFT器件的部分特性表征出来。经过模拟,可以看到OTFT器件的电位分布和载流子密度分布趋势与实验得到的特性基本一致,尤其是夹断现象的产生,与实际情况基本吻合。Organic thin-film transistor（OTFT）,a kind of transistors based on organic semiconductor materials as the active layer,is one of the important researches on organic electronics.In recent years,we have got some basic characteristics of the OTFT by experiment.In order to get some characteristics of the OTFT device in theory,we simulate the OTFT device with top-gate and bottom contact geometry through the finite element method on the basis of physical model and mathematical model in this article.The simulation shows that the potential distribution and carriers distribution of OTFT device almost accord with the experimental results,especially the pinch-off phenomenon occurs,which is in line with the results basically.

关 键 词：有机薄膜晶体管(OTFT) 有限元法 载流子密度 器件模拟 

分 类 号：TN402[电子电信—微电子学与固体电子学]