TiN缓冲层厚度对立方AlN薄膜显微组织结构的影响  

Effect of TiN buffer layer thickness on microstructure of cubic AlN films

作　　者：莫祖康 黄尚力 翁瑶[1] 符跃春[1] 何欢[1] 沈晓明[1] 

机构地区：[1]广西生态型铝产业协同创新中心,广西大学材料科学与工程学院,广西南宁530004

出　　处：《广西大学学报（自然科学版）》2017年第3期1192-1196,共5页Journal of Guangxi University（Natural Science Edition）

基　　金：广西自然科学基金资助项目(2015GXNSFAA139265)

摘　　要：为了提高亚稳立方Al N薄膜的外延质量,采用激光分子束外延法,以Ti N为缓冲层在Si(100)衬底上制备立方Al N薄膜,主要研究了Ti N缓冲层厚度对立方Al N薄膜结晶质量和表面形貌的影响。结果表明,以Ti N为缓冲层可制备出高取向度的立方Al N薄膜,当缓冲层沉积时间为30 min时,立方Al N薄膜的结晶质量最好,表面最平整。Toimprove the epitaxy quality,metastablecubic Al N films were deposited on Si( 100)substrates using Ti N as buffer layers by laser molecular beam epitaxy technique. The effects of Ti N buffer layer thickness on the crystalline quality and surface morphology of cubic Al N films were investigated. The results show that highly oriented cubic Al N films are deposited on Ti N buffer layers. Cubic Al N films show the best crystalline quality and the smoothest surface when the deposition time of Ti N buffer layer is 30 min.

关 键 词：立方AlN薄膜 TiN缓冲层 激光分子束外延 显微组织结构 

分 类 号：O484.1[理学—固体物理]