Al/MoO_3薄膜厚度对含能半导体桥发火特性的影响  

Influence of Film Thickness of Al/MoO_3 on Ignition Performance of Energetic Semiconductor Bridge

作　　者：官震 朱朋[1] 叶迎华[1] 沈瑞琪[1] GUAN Zhen ZHU Peng YE Yinghua SHEN Ruiqi(School of Chemical Engineering,Nanjing university of Science and Technology （Jiangsu Nanjing, 210094)

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《爆破器材》2017年第4期1-6,共6页Explosive Materials

基　　金：国家自然科学基金青年基金资助项目(51201091)

摘　　要：使用微细加工技术在半导体桥上分别集成3μm和6μm厚度的Al/MoO_3纳米含能复合薄膜,制备成含能半导体桥,并使用电容放电的激发方式,研究薄膜厚度对含能半导体桥发火特性的影响。研究发现,随着薄膜厚度的增加,含能半导体桥的临界发火时间和临界发火能量无显著性变化,电容放电的作用总时间、作用总能量和能量利用效率降低,能量输出效率显著增加。[ABSTRACT] Two types of energetic semiconductor bridges （ESCBs） embedded with 3 pm and 6 pm AL/MoO3 ener-getic multilayer nanofilms were prepared with microfabrication technique, respectively. An investigation for the influence of AL/MoO3 film thickness on ignition performance of ESCBs w,as performed. Results show,that the critical ignition time and critical ignition energy of ESCBs have insignificant change. Total ignition time,total ignition energy and energy utilization efficiency decrease along with the increase of film thickness. However, the energy output efficiency increases along with the increase of film thickness.

关 键 词：含能材料 Al/MoO3纳米含能复合薄膜 含能半导体桥 发火特性 

分 类 号：TJ55[兵器科学与技术—军事化学与烟火技术] TJ450