半导体集成电路工艺中电熔丝的研究  

Electrical Fuse Study in Semiconductor Process

作　　者：武洁 WU Jie(HuaHong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China.)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201206

出　　处：《集成电路应用》2017年第6期57-59,共3页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(15RJ0223)

摘　　要：为了提高集成电路良率,基于熔丝技术的冗余电路被大量应用于集成电路设计中。通过选择不同的熔丝种类,达到集成电路设计对编程条件和编程后熔丝阻值的不同需求。通过优化熔丝器件结构、编程条件等参数实现不同应用需求的熔丝量产。实验中,多晶硅电迁移熔丝发生电迁移时编程电流约为10 mA,只有多晶硅热熔断熔丝编程电流的1/3,这样可以有效减小fuse选择管NMOS的尺寸,减小芯片面积。In order to improve the yield in integrated circuit fabrication, engineers introduced redundancy technology which based on fuse technology. In this paper, the different types of fuse were selected to match the different circuit design parameters such as fuse program conditions and fuse resistance after program. The higher fuse product yield was realized by optimizing fuse structures, program conditions etc. In this experiment, EM poly fuse＇s program current is about lOmA when poly fuse happened electro migration which is only one third of program current for thermal poly fuse. Smaller program current can effectively reduce the size of the selected NMOS and the size of the chip.

关 键 词：多晶硅熔丝 激光熔丝 电熔丝 电迁移熔丝 

分 类 号：TN405[电子电信—微电子学与固体电子学]