HMDSO添加对大气压Ar等离子体射流阵列放电特性的影响  

Effect of HMDSO Addition on Discharge Characteristics of Atmospheric Pressure Plasma Jet Array in Argon

作　　者：方志[1] 张波[1] 周若瑜[1] 郝丽丽[1] 侯永全 

机构地区：[1]南京工业大学电气工程与控制科学学院,南京211816 [2]国网江苏省电力公司徐州供电公司,徐州221000

出　　处：《高电压技术》2017年第6期1775-1783,共9页High Voltage Engineering

基　　金：国家自然科学基金(51377075;51677083);江苏省"六大人才高峰"项目 (2014-XNY-006)~~

摘　　要：大气压等离子体射流阵列是适合大面积复杂材料表面处理的等离子体形式。针对材料表面处理对大面积等离子体源的需求,在实现大气压一维Ar等离子体射流阵列的基础上,在工作气体中添加六甲基二硅醚(HMDSO)来获得含憎水性成分的射流阵列放电,利用电学和光学的诊断方法诊断射流阵列的放电特性,并研究了外加电压幅值和HMDSO体积分数变化对射流阵列放电均匀性、放电功率、传输电荷和主要活性粒子的影响,进而优化了大气压Ar等离子体射流阵列的工作条件,为射流阵列憎水改性应用提供参考。结果表明:随着HMDSO体积分数增加,放电电流脉冲幅值、每半周期的脉冲个数、放电功率以及传输电荷均下降,放电耦合排斥作用被抑制,放电均匀性有所加强;除了Si谱线,放电产生的主要粒子谱线强度均随HMDSO体积分数的增加而减小;Si谱线随着HMDSO体积分数提高先增大后减小,在HMDSO体积分数为0.02%时,Si谱线强度出现极大值,因此工作于该条件下的Ar/HMDSO等离子体射流阵列应用于材料的表面憎水改性,有望获得良好效果。Atmospheric pressure plasma jet array is suitable for surface modification of large-area complicated material. To satisfy the needs of large-area plasma sources for material surface hydrophobic treatment, an atmospheric-pressure 1D Ar plasma jet array was accomplished and hexamethyldisiloxane （HMDSO） was added into its working gas to acquire plasma jet array containing hydrophobic containments. Electrical and optical methods were used to diagnose the discharge characteristic of jet array. Effects of applied voltage magnitude and content of HMDSO on discharge uniformity, dis- charge power, transported charge and main active particles were studied for optimizing the working condition of APPJ array in Ar and providing reference for hydrophobic modification by jet array. Results show that, as the content of HMDSO increases, the magnitude of discharge pulse current, the number of pulse current in each half cycle, discharge power, and transported charge are decreased, and the repulsion and coupling effect are restrained and the discharge uniformity is strengthened. Spectral intensities of main particles generated by discharge decrease as the content of HMDSO are increased, while the spectral intensity of silicon is increased before its descent. The maximal peak of silicon intensity exists when the content is 0.02% and plasma jet array fed by Ar/HMDSO working on this condition can be applied in hydrophobic material surface modification to achieve favorable effect.

关 键 词：等离子体射流 射流阵列 含硅成分 憎水性 放电特性 

分 类 号：O53[理学—等离子体物理]