Littman结构的平移透镜外腔半导体激光器  

Shift lens external cavity semiconductor lasers of Littman configuration

作　　者：荣春朝 严进一[1] 龚谦[1] 

机构地区：[1]中科院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049

出　　处：《激光杂志》2017年第6期1-3,共3页Laser Journal

基　　金：973项目(2013CB632800);国家自然科学基金(61176065)

摘　　要：首次提出并实现了一种利用笼式共轴系统搭建的Littman结构平移透镜外腔半导体激光器。通过微调节架驱动准直透镜平移从而改变光栅表面的激光入射角,可以实现约8.5 nm的连续波长调谐,准直透镜平移1μm波长改变约0.02 nm,实验测量值与理论计算值能够很好地吻合。通过压电陶瓷驱动准直透镜平移,研究了Littman结构平移透镜外腔半导体激光器的跳模特性并定性分析了发生跳模的基本原理。此外,该外腔系统的出射激光具有优异的单模特性和稳定性,室温下工作电流为300 m A时单模输出功率超过18 m W。A shift lens external cavity semiconductor laser based on Littman configuration is proposed and realized by using the cage system for the first time. By adjusting the angle of incident laser on the grating surface, we demon- strate the wavelength tuning range of 8.5 nm. The wavelength changes about 0. 02 nm with the shift of 1 um of the col- limating lens. The experimental results agree very well with theoretical calculation. Through the translation of the colli- mating lens driven by piezoelectric ceramics, the mode-hop characteristics of shifting lens external cavity semiconduc- tor lasers of Littman configuration were studied and the basic principle of mode-hop was analyzed qualitatively. Moreo- ver, the lasing beam has excellent single-mode characteristics and stability, as the single-mode output power is over 18mW at room temperature with an injection current of 300 mA.

关 键 词：调谐激光器 平移透镜 跳模 单模激射 

分 类 号：TN248.4[电子电信—物理电子学]