A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit  

作　　者：ZHENG Ruiqing ZHANG Guohao YU Kai LI Sizhen ZHENG Yaohua 

机构地区：[1]School of Information Engineering, Guangdong University of Technology

出　　处：《Chinese Journal of Electronics》2017年第3期502-507,共6页电子学报（英文版）

基　　金：supported by the Leading-Talent Specific Foundation of the Government of Guangdong Province,China(No.400130002);the National Natural Science Foundation of China(No.61404032)

摘　　要：This paper describes the design of a 5.7–6.4GHz Ga As Heterojunction bipolar transistor(HBT)power amplifier for broadband wireless application such as wireless metropolitan area networks.A bias circuit is proposed which enhances the power gain and provides a good linearity.Using the wideband matching network techniques with trap circuits embedded to filter the harmonics and the diode-based linearizing techniques,a broadband power amplifier module was obtained which exhibited a gain above 28d B.This is about 1d B improvement compared with those normal bias circuits at a supply voltage of 5V in the frequency range of 5.7–6.4GHz,measured with Continuous wave(CW)signals.The saturated output power was greater than 33d Bm in 5.7–6.4GHz and the output 1d B compression point was greater than 31d Bm.The phase deviation was less than 5 degrees when the output power below 33d Bm.The second and third order harmonic components were also less than-45d Bc and-50d Bc.This paper describes the design of a 5.7- 6.4GHz GaAs Heterojunction bipolar transistor （HBT） power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good Unearity. Using the wideband matching network techniques with trap circuits embedded to filter the harmonics and the diode-based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about ldB improvement compared with those normal bias circuits at a supply voltage of 5V in the frequency range of 5.7-6.4GHz, measured with Continuous wave（CW） signals. The saturated output power was greater than 33dBm in 5.7-6.4GHz and the output ldB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than -45dBc and -50dBc.

关 键 词：Broadband wireless application Bias circuit Ga As Heterojunction bipolar transistor Power amplifier Wireless metropolitan area network(WMAN) 

分 类 号：TN322.8[电子电信—物理电子学] TN722.75