碳纳米管的K掺杂  

K Doping of Carbon Nanotubes

作　　者：李勇[1] 胡陈果[1] 赵作峰[1] 王万录[1] 

机构地区：[1]重庆大学应用科学与技术系,重庆400044

出　　处：《重庆大学学报（自然科学版）》2002年第8期34-36,共3页Journal of Chongqing University

摘　　要：对碳纳米管掺杂特性的了解是控制其价电子的关键。研究发现 :单壁碳纳米管进行K掺杂后 ,其电阻率和转折温度T (高于此温度后 ,dρ/dT的符号由负变为正 )都会变小 ;其电阻会随着掺杂浓度的升高而单调下降 ,直至饱和。文章还对半导体和金属单壁碳纳米管的K掺杂行为通过光吸收谱进行了研究 。The understanding of doping behavior of carbon nanotubes is crucial in controlling their valence electrons. K doping of single-walled carbon nanotubes leads to an overall reduction in resistivity and in the crossover temperature T * (above T * , the sign of d ρ/ d T changes from negative to positive). The resistance of K-doped single-walled carbon nanotube mats is decreased monotonically and saturated with K doping concentration. The K doping behavior of semiconducting and metallic single-walled carbon nanotube mats has been probed by optical absorption spectroscopy. Molecular dynamics has been used to predict structures of K-doped single-walled carbon nanotubes.

关 键 词：K掺杂 碳纳米管 电阻率 钾掺杂 电学特性 光吸收谱 

分 类 号：O613.71[理学—无机化学] TB383[理学—化学]