基于镜像结构的改进型片上集成线性稳压器  

An Improved On-Chip Linear Voltage Regulator Based on Mirror Structure

作　　者：梁思思[1,2] 虞致国[1,2] 赵琳娜[1,2] 顾晓峰[1,2] 

机构地区：[1]物联网技术应用教育部工程研究中心,江苏无锡214122 [2]江南大学电子工程系,江苏无锡214122

出　　处：《微电子学》2017年第3期313-316,321,共5页Microelectronics

基　　金：江苏省自然科学基金资助项目(BK20130156);江苏省六大人才高峰资助项目(2013-DZXX-027);中央高校基本科研业务费专项资金资助项目(JUSRP51510);江苏省普通高校研究生实践创新计划资助项目(KYLX15_1192)

摘　　要：基于镜像结构,设计了一种改进型片上集成线性稳压器。在NMOS源跟随器结构的后级单元中增加了低增益反馈回路,不仅继承了常规镜像结构良好的负载瞬态响应性能,而且获得了低的负载调整率。仿真结果表明,相比于常规镜像结构的线性稳压器,改进型线性稳压器的负载调整率降低了26.14%,静态电流为9.8μA,电源抑制比达到72.82dB。该线性稳压器可在10μs内实现0.1~100mA脉冲信号变化的快速响应,且过冲电压和欠冲电压均小于100mV。Based on the mirror structure, an improved on-chip linear voltage regulator was proposed. A low gain feedback loop was added in the next stage of NMOS source follower structure. Not only the good load transient response performance of conventional mirror structures was inherited, but also the low load regulation of linear voltage regulators was obtained. Simulation results showed that the load regulation had reduced by 26.14% compared with that of the conventional mirror structure of linear regulators. The static load current was 9.8 μA, the power supply rejection ratio was 72.82 dB. The proposed linear voltage regulator could realize fast response at a pulse signal rapid change of 0.1 to 100 mA within 10 μs, and its overshoot voltage and undershoot voltage were both less than 100 mV.

关 键 词：线性稳压器 NMOS调整管 源跟随器 负载瞬态响应 

分 类 号：TN432[电子电信—微电子学与固体电子学]