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作 者:刘亚泽 张万荣 金冬月[1] 谢红云[1] 陈吉添[1] 黄鑫[1] 刘硕[1] 赵馨仪
机构地区:[1]北京工业大学电子信息与控制工程学院,北京100124
出 处:《微电子学》2017年第3期341-346,共6页Microelectronics
基 金:国家自然科学基金资助项目(61574010);北京市自然科学基金资助项目(4142007;4143059);北京市未来芯片技术高精尖创新中心科研基金资助项目(KYJJ2016008)
摘 要:提出了一种增益高且增益可调谐的1~3GHz宽带低噪声放大器(HTG-LNA)。在输入级,采用带有RC串联负反馈的共基-共射电流镜结构,实现了良好的输入匹配,并提高了电路的稳定性;在中间级,采用以有源电感作为负载的共基-共射达林顿电路结构,在保证宽带的同时实现了较高的增益与增益的可调谐;在输出级,采用带有电流镜的射极跟随器结构,获得了较大的输出功率和良好的输出匹配。基于稳懋0.2μm GaAs HBT工艺进行验证,结果表明,该HTG-LNA的电压增益大于37dB,最高可达50.7dB;功率增益大于37.4dB,最高可达51dB;最大增益可调谐幅度为2.2dB;输入回波损耗小于-7.11dB;输出回波损耗小于-11.97dB;噪声系数小于3.23dB;稳定因子大于5.61;在5V工作电压下,静态功耗小于65mW。A 1-3 GHz wideband low noise amplifier with high and tunable gain (HTG-LNA) was presented. At the input stage, a cascode current mirror structure with RC series negative feedback was used to achieve good input impedance matching and improve the stability. At the middle stage, a cascode Darlington amplifier with an active inductor as load was employed, which could provide high and tunable gain under the broadband operation. At the output stage, an emitter follower structure with a current mirror was used to provide high output power and to achieve good output impedance matching. Based on the standard WIN 0.2 μm GaAs HBT process, the proposed HTG-LNA was verified. The results showed that the HTG-LNA had a voltage gain of over 37 dB, a maximum voltage gain of 50. 7 dB, a power gain of more than 37.4 dB, a maximum power gain of 51 dB, a maximum gain tuning range of 2.2 dB, an input return loss of less than -7.11 dB, an output return loss of less than -11.97 dB, a noise figure of less than 3.23 dB, and a stability factor of higher than 5.61. The static power consumption was less than 65 mW at 5 V supply voltage.
分 类 号:TN722.3[电子电信—电路与系统]
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