Enhanced Efficiency of Metamorphic Triple Junction Solar Cells for Space Applications  

作　　者：王笃祥 宋明辉 毕京锋 陈文浚 李森林 刘冠洲 李明阳 吴超瑜 

机构地区：[1]Tianjin San'an Optoelectronics Co., LTD., Tianjin 300384

出　　处：《Chinese Physics Letters》2017年第6期126-130,共5页中国物理快报（英文版）

基　　金：Supported by the Grand from Tianjin Little Giant Fund under Grant No 14ZXLJGX00400;the Tianjin Science and Technology Support Plan under Grant No 16YFZCGX00030

摘　　要：Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction （3J-MM） solar cells are grown on Ge （100） sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the results show that the high crystal quality of 3J-MM solar cells is obtained with low threading dislocation density of graded buffer （an average value of 6.8× 10^4/cm2）. Benefitting from the optimized bandgap combination, under one sun, AM0 spectrum, 25℃ conditions, the conversion efficiency is achieved about 32%, 5% higher compared with the lattice-matched In0.49Ga0.51P/In0.01Ga0.99As/Ge triple junction （3J-LM） solar cell. Under 1-MeV electron irradiation test, the degradation of the EQE and I-V characteristics of 3J-MM solar cells is at the same level as the 33-LM solar cell. The end-of-life efficiency is -27.1%. Therefore, the metamorphic triple-junction solar cell may be a promising candidate for next-generation space multi-junction solar cells.Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction （3J-MM） solar cells are grown on Ge （100） sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the results show that the high crystal quality of 3J-MM solar cells is obtained with low threading dislocation density of graded buffer （an average value of 6.8× 10^4/cm2）. Benefitting from the optimized bandgap combination, under one sun, AM0 spectrum, 25℃ conditions, the conversion efficiency is achieved about 32%, 5% higher compared with the lattice-matched In0.49Ga0.51P/In0.01Ga0.99As/Ge triple junction （3J-LM） solar cell. Under 1-MeV electron irradiation test, the degradation of the EQE and I-V characteristics of 3J-MM solar cells is at the same level as the 33-LM solar cell. The end-of-life efficiency is -27.1%. Therefore, the metamorphic triple-junction solar cell may be a promising candidate for next-generation space multi-junction solar cells.

关 键 词：GA MM As Enhanced Efficiency of Metamorphic Triple Junction Solar Cells for Space Applications 

分 类 号：TM914.4[电气工程—电力电子与电力传动]