Fabrication and Properties of Ag/Mg0.2Zn0.8O/La0.67Ca0.33MnO/p^＋-Si Resistive Switching Heterostructure Devices  

作　　者：韦长成 王华 XU Jiwen ZHANG Yupei CHEN Qisong 

机构地区：[1]School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2017年第3期547-551,共5页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China(No.51262003);the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)

摘　　要：Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.

关 键 词：heterostructure Ag/MZO/LCMO/p^＋-Si sol-gel resistive switching 

分 类 号：O611.3[理学—无机化学]