碳化硅粉体的整形及其再结晶动力学研究  

Research on Reshaping and Recrystallization Dynamics of Silicon Carbide Powders

作　　者：刘望生[1] 代小元 许顺祥 高金锋[1] 薛俊[1,2] 曹宏[1,2] 

机构地区：[1]武汉工程大学材料科学与工程学院,武汉430074 [2]武汉工程大学节能材料与膜技术研究所,武汉430074

出　　处：《中国陶瓷》2017年第6期8-13,共6页China Ceramics

基　　金：国家科技支撑计划(2013BAB07B05);湖北省自然科学基金(2014CFB788);武汉工程大学科学研究基金(K201465);武汉工程大学研究生教育创新基金(CX2015012)

摘　　要：采用热处理法对不规则形状碳化硅粉体进行了整形研究。分析了不同粒径碳化硅粉末在不同热处理温度下,碳化硅粉末的形貌、圆度、粒径大小的变化,并对其再结晶动力学机制进行了初步探讨。结果表明:高温热处理对碳化硅粉体能进行有效的整形,在2000~2050℃热处理温度范围内,整形后碳化硅颗粒球形度高,颗粒表面圆滑;碳化硅粉在高温下的再结晶传质方式为蒸发-凝聚,在再结晶初期,当再结晶时间一定时,碳化硅粉颈部增长率与原始颗粒半径成反比,与温度成正比。The irregular shape of SiC powders were reshaped by the method of heat treatment. The different size of SiC powders were analyzed under different heat treatment temperatures. The morphology, roundness, particle size of the SiC powders before and after reshaping were characterized. And the recrystallization dynamics mechanism of SiC was discussed. The results show that SiC powders can be reshaped effectively by high temperature heat treatment. At range of 2000- 2050 ℃ , the sphericity degree of the reshaped SiC powders was high, and the particle have a smooth surface. The recrystallization and mass transfer mode of SiC powders were evaporation-condensation at high temperature. When the recrystallization time was fixed, the neck growth rate of SiC powders was inversely proportional to the radius but proportional to the heat treatment temperature in the early stage of recrystallization.

关 键 词：碳化硅粉体 热处理 整形 再结晶 

分 类 号：TQ174.42[化学工程—陶瓷工业]