氧化石墨烯表面原位生长纳米碳化钨工艺及形貌  

Morphology and in-situ growth process of nano-tungsten carbide on the surface of oxide graphene

作　　者：田浩亮[1] 张欢欢[1] 王长亮[1] 郭孟秋[1] 崔永静[1] 高俊国[1] 

机构地区：[1]北京航空材料研究院航空材料先进腐蚀与防护航空科技重点实验室,北京100095

出　　处：《金属热处理》2017年第6期196-200,共5页Heat Treatment of Metals

基　　金：国家自然科学基金(51605455)

摘　　要：为发挥氧化石墨烯在热喷涂碳化钨耐磨涂层中自润滑性能,提高氧化石墨烯与热喷涂粉末的相容性,将偏钨酸铵作为钨的前驱体与氧化石墨烯混合,采用还原技术在氧化石墨烯表面原位生长纳米尺度碳化钨颗粒。借助XRD和SEM研究偏钨酸铵与氧化石墨烯不同摩尔配比、不同升温速率、不同反应温度等条件下获得样品的物相组成及表面形貌。结果表明:氧化石墨烯表面原位生长纳米碳化钨所需原料氧化石墨烯与偏钨酸铵最佳配比优化后对应为n(W)∶n(C)=1∶5,最佳升温速率为70℃/min,最佳还原温度为700℃,该条件下获得样品形貌为纳米片层氧化石墨烯表面弥散分布有尺度均匀的纳米碳化钨颗粒。In order to exert self-lubricating properties of graphene oxide（ GO） in tungsten carbide coating prepared by the thermal spraying,and improve the compatibility of GO and spray powder,nano-tungsten carbide particles was in-situ grew on the GO surface by reduction technique and mixing GO with Ammonium metatungstate（ NH4）6H2W12·O40·10H2O（ AMT） which as the precursor of tungsten. XRD and SEM were used to study the surface morphology and phase composition of the samples with different ratios of AMT and GO and different heating rates and different temperatures. The results show that the optimum molar ratio of n（ W） ∶ n（ C）,corresponding to that contained in AMT and GO,is 1∶5,the best heating rate is about 70 ℃/min,and the optimal reduction temperature is 700 ℃. The samples obtained by optimizing process parameters have uniform size tungsten carbide nanoparticles uniformly dispersed on the GO surface.

关 键 词：氧化石墨烯 纳米碳化钨 相组成 形貌 

分 类 号：TG174[金属学及工艺—金属表面处理]