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机构地区:[1]重庆光电技术研究所,重庆400060 [2]中国科学院重庆绿色智能技术研究院,重庆400714
出 处:《半导体光电》2017年第3期334-337,395,共5页Semiconductor Optoelectronics
摘 要:提出了一种基于石墨烯纳米条带阵列的光电探测器(GNR-PD)结构,讨论了器件的解析模型。基于二维泊松方程,在弱非局域近似条件下建立了GNR-PD的器件模型,推导了其I-V特性和光响应特性。结果表明,GNR-PD具有极高量子效率和光电增益,可以获得高达150A/W以上的光响应度。A novel type of photodetector structure based on graphene nanoribbons(GNRPD)array was presented and the analytical device model was discussed in this paper.By applying the two-dimensional Poisson equation,the model of GNR-PD analytical device model was established under the weak nonlocal approximation condition.The I-V characteristics and photoresponse characteristics of GNR-PD device are derived.It is shown that due to the extrahigh quantum efficiency and photoelectric gain of GNR-PD,the photo responsivity of up to150A/W or more can be obtained.
分 类 号:TN36[电子电信—物理电子学]
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