铌酸锂低半波电压电光调制器研究  

Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate

作　　者：陈硕 刘占元 牛晓晨 李学鹏[2] 陈开鑫[2] 

机构地区：[1]全球能源互联网研究院,北京102209 [2]电子科技大学通信与信息工程学院,成都611731

出　　处：《半导体光电》2017年第3期342-344,共3页Semiconductor Optoelectronics

摘　　要：对降低铌酸锂(LN)电光调制器的半波电压进行了研究,探索了利用反射结构实现低半波电压的原理。通过退火质子交换工艺在x切LN晶片上制作了反射结构的LN电光调制器。测试表明,这种反射结构的LN电光调制器在保持器件长度不变的条件下可以降低半波电压。This paper focuses on lowering the half-wave voltage of lithium niobate（LN）electro-optic modulator.The principle of realizing the low half-wave voltage by the reflection structure is investigated.A reflection type electro-optic modulator is proposed and fabricated with x-cut LN crystal through the annealed proton-exchanged process.Preliminary results prove that the proposed reflection type LN electro-optic modulator can lower the half-wave voltage without increasing the length of device.

关 键 词：铌酸锂 电光调制器 退火质子交换 半波电压 反射结构 

分 类 号：TN253[电子电信—物理电子学]