双氦离子化气相色谱仪分析四氟化硅气体中微量杂质  

Analysis of High Purity Silicon Tetrafluoride by Dual-channel Helium Ionization Gas Chromatogragh

作　　者：陈学航 张建刚[1] 高文龙[1] 陈烨[2] 肖超[1] 

机构地区：[1]贵州省产品质量监督检验院,贵阳550016 [2]贵州大学化学与化工学院,贵阳550025

出　　处：《硅酸盐通报》2017年第6期1985-1990,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家质量监督检验检疫总局科技计划项目(2015QK194);贵州省科技计划(黔科合SY字[2014]3068号)

摘　　要：介绍了一种利用双通道氦离子化气相色谱仪(PDHID),分析四氟化硅中微量硅烷、磷烷、氟代烷、C2~C3碳氢化合物以及常见气体杂质的方法。由于四氟化硅具有很强的腐蚀性,在对其进行分析时,利用阀切割系统将大量的四氟化硅主要成分切割,及时地将四氟化硅反吹出去,使其不进入检测器系统。经过将四氟化硅气体进样检测验证,该方法能够有效测定四氟化硅气体中多种微量杂质。This article presents a method which is using dual channel helium ionization gas chromatogragh （PDHID） , to analyze trace silane, phosphine, fluoroalkane, C2-C3 hydrocarbon and some impurities of common gas. Owing to silicon tetrafluoride is provided with strong corrosiveness, in the analysis of its, using valve cutting back blowing system can make large number of silicon tetrafluoride principal component cutting, then backlowing silicon tetrafluoride out in time. So that it cann＇t enter the detector system. Through the silicon tetrafluoride gas sample verification, this method can effectively measure silicon tetrafluoride gas in a variety of trace impurities.

关 键 词：四氟化硅 氟代烷 C2~C3碳氢化合物 双通道氦离子化气相色谱(PDHID) 

分 类 号：TQ264.1[化学工程—有机化工] O657.7[理学—分析化学]