粒子束注入单晶硅尺寸效应的机理研究  

Mechanism Study on Size Effects of Cluster Implantation on Silicon

作　　者：魏也 周兵[2] 桑胜波[1] 邓宵[3] 柴晶[1] 陈泽华[1] 张文栋[1] 

机构地区：[1]太原理工大学信息工程学院微纳系统研究中心新型传感器与智能控制系统重点实验室,太原030024 [2]太原理工大学表面工程研究所,太原030024 [3]太原理工大学物理与光电工程学院,太原030024

出　　处：《人工晶体学报》2017年第6期1064-1071,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51622507;61471255;61474079;61403273;51502193;61307006)

摘　　要：使用分子动力学方法研究硅粒子注入技术。系统比较分析了团簇粒子的包含反射,扩散和植入基底在内的全部运动过程,同时使用可视化方法观测记录基底表面形貌演化过程。所建立模型直观地显示了低注入能量域内的新特征。注入过程中,团簇粒子由不同粒径(数量)的硅原子组成。通过对粒径变化在注入过程的影响研究揭示了注入技术机理。仿真结果表明提出方法可用于定量预测注入粒子表面分布。本文工作可作为原子尺度下生成基底表面特征或设计图案的参考,并对可控表面沉积技术提供理论指导。Si cluster implantation was investigated using molecular dynamics （MD） simulation. Cluster ions＂ motion was systematically investigated and compared, specifically its whole trajectory is tracked： scattering, irradiation and penetration. Subsequent long-time scale evolution of morphology on substrate surface was also monitored with visualized method. The established model straightforwardly reveals a range of novel features in low incident energy range. During the implantation, the cluster is composing variable numbers of atoms. The effect of size variations on the implantation process was examined to investigate the regime of motion of cluster. Simulation results indicate that the presented approach could be used to quantitatively predict the implanted cluster ions J distribution. Our work could serve as references on generating surface feature of substrate materials or designing pattern in atomic scale and provide theoretical guidelines for controllable surface modification technique.

关 键 词：单晶硅 粒子束注入 注入率 分子动力学 尺寸效应 

分 类 号：TB131[理学—物理] TN304.055[理学—应用物理]