Spin-Polarization in Quasi-Magnetic Tunnel Junctions  

作　　者：谢征微 李玲 

机构地区：[1]College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610066

出　　处：《Chinese Physics Letters》2017年第5期115-118,共4页中国物理快报（英文版）

基　　金：Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and16ZA0047;the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No12TD008

摘　　要：Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasimagnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter （SF） layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight.Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasimagnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter （SF） layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight.

关 键 词：Spin-Polarization in Quasi-Magnetic Tunnel Junctions TMR 

分 类 号：O469[理学—凝聚态物理]