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机构地区:[1]School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,Nanjing University [2]School of Electronics and information, Hangzhou Dianzi University
出 处:《Chinese Physics Letters》2017年第5期128-131,共4页中国物理快报(英文版)
基 金:Supported by the National Science Foundation for Distinguished Young Scholars of China under Grant No 61425020;the Zhejiang Provincial Natural Science Foundation of China under Grant No LR13F040001;the National Natural Science Foundation of China under Grant No 51502131
摘 要:Amorphous InGaZnO4 neuron transistors based on multi-gate electric-double-layer modulation are fabricated by photolithography processes. The sweeping rate dependent output current and hysteresis loop are observed due to the proton dynamic process in the SiO2 nanogranular electrolyte. Temporal summation such as paired-pulse facilitation is mimicked in the neuron transistor with one presynaptic input. At the same time, supralinear ,spatial summation of two presynaptic inputs is also successfully mimicked in the neuron transistor with two presynaptic inputs. Our InGaZnO4 neuron transistors with temporal and spatial summation function are interesting for the brain-inspired neuromorphic system.Amorphous InGaZnO4 neuron transistors based on multi-gate electric-double-layer modulation are fabricated by photolithography processes. The sweeping rate dependent output current and hysteresis loop are observed due to the proton dynamic process in the SiO2 nanogranular electrolyte. Temporal summation such as paired-pulse facilitation is mimicked in the neuron transistor with one presynaptic input. At the same time, supralinear ,spatial summation of two presynaptic inputs is also successfully mimicked in the neuron transistor with two presynaptic inputs. Our InGaZnO4 neuron transistors with temporal and spatial summation function are interesting for the brain-inspired neuromorphic system.
分 类 号:TN32[电子电信—物理电子学]
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