带本征薄层硅异质结HIT太阳能电池的研究与发展  

A review on the research and development of the silicon-based heterojunction HIT solar cells with intrinsic thin layer

作　　者：文国知[1] 范吉军[1] 李相虎[1] 

机构地区：[1]武汉轻工大学电气与电子工程学院,湖北武汉430023

出　　处：《武汉轻工大学学报》2017年第2期1-7,共7页Journal of Wuhan Polytechnic University

基　　金：湖北省教育厅科技计划项目资助(B2016074)

摘　　要：介绍了带本征薄层硅异质结HIT太阳能电池的研究与产业化进程。阐述了提高硅异质结HIT太阳能电池光电转换效率的关键技术,如单晶硅片表面的织构化技术、异质结界面的钝化技术、栅电极制备技术和双面电池技术。最后,介绍了基于量子限域效应的硅量子点异质结HIT太阳能电池的设计理论及研究进展。Areviewon the research and the industrialization of silicon-based HIT solar cells with intrinsic thin layer is presented. The key technologies about improving the conversion eficiencies of siticon-based HIT solar cell are in-troduced , such as the texturization of silicon wafer surface, the pasivation of heterojunction interface, the grid e-lectrode fabrication, and the bifacial processes. Research achievements on the theoretical design and the experi-mental efforts about tlie silicon quantum dots HIT solar cells, which are based on quantum confiexplained in the last part.

关 键 词：硅异质结 本征层 钝化 转换效率 太阳能电池 

分 类 号：TN245[电子电信—物理电子学]