Shear response of β-SiC bulk dependent on temperature and strain rate  

Shear response of β-SiC bulk dependent on temperature and strain rate

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作  者:Liang Wang Qunfeng Liu Wenshan Yu Shengping Shen 

机构地区:[1]State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi'an Jiaotong University, Xi'an 710049, PR China

出  处:《Acta Mechanica Solida Sinica》2017年第2期137-144,共8页固体力学学报(英文版)

基  金:supported by the National Natural Science Foundation of China(NSFC Grants No.11632014,11302161 and11302162);China Postdoctoral Science Foundation(Grant No.2013M542339);the Chang Jiang Scholar program

摘  要:The shear responses of β-SiC are investigated using molecular dynamics simulation with the Tersoff interatomic potential. Results show a clear decreasing trend in critical stress,fracture strain and shear modulus as temperature increases. Above a critical temperature, β-SiC bulk just fractures after the elastic deformation. However, below the critical temperature, an interesting pattern in β-SiC bulk emerges due to the elongation of Si-C bonds before fracture. Additionally, the shear deformation of β-SiC at room temperature is found to be dependent on the strain rate. This study may shed light on the deformation mechanism dependent on temperature and strain rate.The shear responses of β-SiC are investigated using molecular dynamics simulation with the Tersoff interatomic potential. Results show a clear decreasing trend in critical stress,fracture strain and shear modulus as temperature increases. Above a critical temperature, β-SiC bulk just fractures after the elastic deformation. However, below the critical temperature, an interesting pattern in β-SiC bulk emerges due to the elongation of Si-C bonds before fracture. Additionally, the shear deformation of β-SiC at room temperature is found to be dependent on the strain rate. This study may shed light on the deformation mechanism dependent on temperature and strain rate.

关 键 词:β-SiC Fracture Temperature effect Strain rate Shear deformation 

分 类 号:TN304.24[电子电信—物理电子学]

 

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