静态随机存储器双向互锁存储单元的抗老化设计  

Design for combating aging of static random access memory cell based on dual interlocked cell

作　　者：刘士兴[1] 范对鹏 程龙[1] 王世超[1] 丁力[1] 易茂祥[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《浙江大学学报（工学版）》2017年第7期1453-1461,共9页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金面上项目(61371025;61574052;61274036)

摘　　要：为了延长抗辐照静态随机存储器双向互锁存储单元(DICE)电路的使用时限,得到偏置温度不稳定性效应(BTI)老化效应对DICE单元性能的具体影响,提出抗老化设计方案.通过SPICE仿真实验,分析DICE单元的老化特性,发现因老化加重的读干扰和半选择干扰是影响DICE结构的SRAM单元稳定性和寿命的主要原因.针对DICE单元抗辐照结构的特性,提出新的DICE单元读写端口结构.通过在组成读写端口的4个晶体管之间加入额外的控制晶体管,阻断了DICE单元存储节点相连的路径,消除了读干扰和半选择干扰的影响,避免了单元的读故障和半选择故障的出现.改进后的DICE单元在读状态和半选择状态时的抗辐照能力与改进前相比得到了提升.通过仿真实验,验证了改进后DICE单元的功能正确性和抗老化有效性,直接减少了DICE单元经过108 s老化后22.6%的读失效率.The specific influence of bias temperature instability（BTI）effect on performance of dual interlocked cell（DICE）in SRAM was obtained,and an anti-aging design was proposed in order to prolong service life of DICE Cell.The aging characteristics of DICE Cell were analyzed through SPICE simulation.The simulation results show that aging is mainly caused by the ever increasing read and half-selected disturb.The new read and write port of DICE cell was proposed through the use of specific feature of antiirradiation structure of DICE cell.The path between storage nodes of DICE cell was blocked by adding four controlling transistors in read and write port.The read disturb and half-selected disturb were eliminated and the read failure was avoided.The ability to tolerant SEU was increased during read and half-select process. The simulation results showed that the functional correctness and anti-aging effectiveness of the improved DICE cell were verified,and the read failure rate after 108 s aging was reduced by 22.6%.

关 键 词：双向互锁存储单元(DICE) 偏置温度不稳定性 控制晶体管 读干扰 半选择干扰 抗老化 

分 类 号：TN47[电子电信—微电子学与固体电子学]