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机构地区:[1]常州大学机械工程学院,常州213164 [2]常州大学材料科学与工程学院,常州213164
出 处:《材料研究学报》2017年第6期429-436,共8页Chinese Journal of Materials Research
基 金:国家自然科学基金(51205032;51405038;51575058)~~
摘 要:设计合成了以具有放射状介孔孔道(孔径约2.6 nm)的介孔氧化硅(mSiO_2)微球(粒径约300 nm)为内核、以CeO_2纳米颗粒为包覆层(壳厚为15~20 nm)的m SiO_2/CeO_2复合颗粒(粒径在330~340 nm),使用场发射扫描电镜、透射电镜、X射线衍射、傅里叶转换红外光谱和氮气吸脱附等手段表征了样品的结构。结果表明,使用以实心氧化硅(sSiO_2)为内核的sSiO_2/CeO_2复合颗粒抛光的热氧化硅片其表面粗糙度均方根值(Root-mean-square roughness,RMS)为0.309 nm,材料的去除率(Material removal rate,MRR)为24 nm/min)。mSiO_2/CeO_2复合颗粒有利于得到更低的氧化硅片抛光表面粗糙度(RMS=0.267 nm)和更高的抛光速率(MRR=45 nm/min),且能避免出现划痕等机械损伤。SiO_2/CeO_2复合颗粒中的氧化硅内核结构,对其抛光特性有明显的影响。The composite particles of mSiO_2/CeO_2(330-340 nm in size) were prepared by applying CeO_2 nanoparticles coating(15-20 nm in thickness) on core material of mesoporous silica(m SiO_2, ca. 300 nm in size) with radial mesochannels(ca. 2.6 nm in pore size). The prepared composite particles were characterized by transmission electron microscopy, field emission scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and nitrogen adsorption-desorption analysis. The results show that the oxidized silicon wafer substrates was polished comparatively with when taking mSiO_2/CeO_2 composite particles or sSiO_2/CeO_2 composite particles(solid silica core) as polishing paste, the polished pre-oxidized silicon wafer presented had a lower root-mean-square roughness(RMS=0.267 nm) and a higher material removal rate(MRR=45 nm/min) for the former paste, in the contrast, than those of the s SiO_2/CeO_2 composite particles with solid silica cores(RMS=0.309 nm and MRR=24 nm/min for the later one. Furthermore, the mSiO_2/CeO_2 composite particles may be beneficial were attributed to the elimination of mechanical damages(such as scratches) on the wafer surface. The very structure of silica core of mSiO_2/CeO_2 composite particles presented obvious effects for their polishing characteristics.
关 键 词:无机非金属材料 氧化硅 氧化铈 核壳结构 复合颗粒 抛光
分 类 号:TB321[一般工业技术—材料科学与工程] TB383
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