Double-gate-all-around tunnel field-effect transistor  

作　　者：张文豪 李尊朝 关云鹤 张也非 

机构地区：[1]School of Microelectronics Xi’an Jiaotong University [2]Guangdong Xi’an Jiaotong University Academy

出　　处：《Chinese Physics B》2017年第7期449-453,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61176038 and 61474093);the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010103002);the Technology Development Program of Shanxi Province,China(Grant No.2016GY075)

摘　　要：In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.

关 键 词：gate-all-around（GAA） tunnel field effect transistor（TFET） drain induced barrier thinning（DIBT） 

分 类 号：TN386[电子电信—物理电子学] U455.4[建筑科学—桥梁与隧道工程]