Atomically thin InSe:A high mobility two-dimensional material  

作　　者：FENG Wei ZHENG Wei GAO Feng HU PingAn 

机构地区：[1]Key Lab of Microsystem and Microstructure,Harbin Institute of Technology,Harbin 150080,China [2]School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150080,China

出　　处：《Science China(Technological Sciences)》2017年第7期1121-1122,共2页中国科学（技术科学英文版）

基　　金：supported by the National Key Basic Research Program of China(Grant No.2013CB632900);National Natural Science Foundation of China(Grant Nos.61390502&21373068);the Foundation for Innovative Research Groups of the National Natural Science Foundation of China(Grant No.51521003);Self-Planned Task of State Key Laboratory of Robotics and System(HIT)(Grant No.SKLRS201607B)

摘　　要：Since silicon is limited by its physical properties,it is challenging and important to find candidate materials for high performance electronic devices.Two-dimensional（2D）semiconductor materials have attracted dramatically increasing interest due to their unique physical,

关 键 词：challenging promise candidate dramatically outperform compatible phosphorus fabrication extremely attributed 

分 类 号：TN304[电子电信—物理电子学]