Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability  

作　　者：Weiyi Li Zhili Zhang Kai Fu Guohao Yu Xiaodong Zhang Shichuang Sun Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang 

机构地区：[1]Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123,China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China [4]Nanjing University of Science and Technology, school of materials science and engineering, Nanjing 210094, China [5]Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China

出　　处：《Journal of Semiconductors》2017年第7期49-55,共7页半导体学报（英文版）

基　　金：supported by the Key Technologies Support Program of Jiangsu Province(No.BE2013002-2);the National Key Scientific Instrument and Equipment Development Projects of China(No.2013YQ470767)

摘　　要：We proposed a novel Al Ga N/Ga N enhancement-mode（E-mode） high electron mobility transistor（HEMT） with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs（from 2.83 MV/cm decreased to 0.83 MV/cm）. Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.We proposed a novel Al Ga N/Ga N enhancement-mode（E-mode） high electron mobility transistor（HEMT） with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs（from 2.83 MV/cm decreased to 0.83 MV/cm）. Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.

关 键 词：GaN HEMT enhancement-mode electric field distribution V_（th） instability 

分 类 号：TN386[电子电信—物理电子学] TJ760.623[兵器科学与技术—武器系统与运用工程]