Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry  

作　　者：S.K.Vishvakarma Ankur Beohar Vikas Vijayvargiya Priyal Trivedi 

机构地区：[1]Discipline of Electrical Engineering, Indian Institute of Technology, Indore, 453446, India

出　　处：《Journal of Semiconductors》2017年第7期64-70,共7页半导体学报（英文版）

基　　金：supported by the Council of Scientific and Industrial Research(CSIR)Funded Research Project,Grant No.22/0651/14/EMR-II,Government of India

摘　　要：In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor（TFET） has been made using distinct device geometry. Firstly, performance parameters of GAATFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm.However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device.In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor（TFET） has been made using distinct device geometry. Firstly, performance parameters of GAATFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm.However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device.

关 键 词：tunnel field effect transistor cutoff frequency maximum oscillation frequency and gate all around 

分 类 号：TN386[电子电信—物理电子学]