Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor  

作　　者：Xiaofeng Zhao Dandan Li Yang Yu Dianzhong Wen 

机构地区：[1]Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China

出　　处：《Journal of Semiconductors》2017年第7期89-92,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61471159);the Natural Science Foundation of Heilongjiang Province(No.F201433);the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.2015018);the Special Funds for Science and Technology Innovation Talents of Harbin in China(No.2016RAXXJ016)

摘　　要：Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.

关 键 词：SOI pressure sensor asymmetric base region transistor temperature compensation temperature coefficient of the sensitivity MEMS technology 

分 类 号：TN32[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]