氧化槽隔离型RC-IGBT的设计与仿真  

The Design and Simulation of Reverse Conducting IGBT with Polysilicon Trench Surrounded by Thin Oxide Layer

作　　者：马丽[1] 李伟[1] 李佳豪 谢加强[2] 康源[1] 王馨梅[2] 

机构地区：[1]西安理工大学理学院,西安710054 [2]西安理工大学自动化与信息工程学院,西安710048

出　　处：《固体电子学研究与进展》2017年第3期195-200,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61575158)

摘　　要：提出了一种新型的RC-IGBT器件,相比于常规RC-IGBT,新型的RC-IGBT在集电极侧引入了一个类似于栅极的多晶硅沟槽结构,不同之处是沟槽底部结构没有氧化层将多晶硅与硅体区相隔离,于是可将此重掺杂的多晶硅区作为新型的RC-IGBT的集电极的N+短路区,故称为TO-RC-IGBT(Trench oxide reverse conducting IGBT)。由于集电极P+阳极层与N+短路区之间的氧化层隔离,TO-RC-IGBT并未出现常规RC-IGBT导通时的回跳现象。为了避免产生回跳现象,常规RC-IGBT的元胞宽度通常达数百微米,而TO-RC-IGBT元胞宽度只有20μm,因而TO-RC-IGBT不会出现常规RC-IGBT的反向电流分布不均匀的问题。A novel reverse conducting IGBT was proposed.Compared to the conventional RC-IGBT,it features an additional polysilicon trench region surrounded by thin oxide layer at the bottom of the collector side,similar to the structure of polysilicon gate.The only difference between them is that the polysilicon structure at trench bottom contacts directly with the silicon region without thin oxide layer.Then the heavy doping polysilicon structure can be functioned as N＋short region at collector side of the RC-IGBT.Hence the new one is named as trench oxide RC-IGBT（TO-RC-IGBT）.With the help of the thin oxide layer separation between N＋short region and P＋Anode region in the TO-RC-IGBT,the snapback-free can be obtained in a single cell with a width of 20μm.As a result,the non-uniform reverse current distribution in conventional RC-IGBT would not occur in the TO-RC-IGBT.

关 键 词：逆导型绝缘栅双极场效应晶体管 回跳现象 器件仿真 

分 类 号：TN322.8[电子电信—物理电子学]