基于双栅场效应管的二值到三值转换电路设计  

The Design of Two to Three-valued Conversion Circuits Based on Dual-gate FETs

作　　者：方晨斌[1] 夏银水[1] FANG Chen-bin XIA Yin-shui(Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China)

机构地区：[1]宁波大学信息科学与工程学院,宁波315211

出　　处：《无线通信技术》2017年第2期57-61,共5页Wireless Communication Technology

摘　　要：双栅场效应管是近年来提出的一种新颖场效应管器件。本文以双栅场效应管(DG-FET)为研究对象,根据双栅场效应管的亚导通态特性分析,进行二值-三值编码电路的设计。设计实例表明,与传统设计方法相比,利用双栅场效应管亚导通态进行二值-三值编码电路设计具有明显的优势,从而为推进三值逻辑电路的实用化提供途径。Dual-gate field effect transistor is one of the recently presented new deviceso This paper takes dual - gate field - effect transistor （DG-FET） as the research target, a novel ternary logic circuit is designed with the characteristics of the half - conduction state of the double gate FETo Design examples show that compared with the traditional design methods, the coding circuit for the binary- to-ternary conversion is designed with the half-conduction state of the dual - gate field-effect tran- sistor and the better results are obtainedo The work provides a new solution to push forward the practice use of ternary logic o

关 键 词：双栅场效应管 数字电路 开关-信号理论 

分 类 号：TP391.41[自动化与计算机技术—计算机应用技术]