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作 者:李慧勤[1] 窦树梅[1] 韩银凤[1] LI Huiqin DOU Shumei HAN Yinfeng(Department of Chemistry & Chemical Engineering Baoji University of Arts and Sciences, Baoji 721013, China)
出 处:《中国陶瓷》2017年第7期27-30,共4页China Ceramics
基 金:陕西省科技厅项目(2013JQ2022);陕西省教育厅专项科研计划项目(11JK0601);宝鸡文理学院重点项目;博士科研启动费项目(ZK11149;ZK2017027)
摘 要:以水热合成Zn_(0.9)Cr_(0.1)O为例,探讨其反应机理。采用分析纯的ZnCl_2和CrCl_3为原料,以3 mol/L NaOH作为矿化剂,在260℃下,进行水热合成反应Zn_(0.9)Cr_(0.1)O稀磁半导体晶体。XRD表明所制备的Zn_(0.9)Cr_(0.1)O稀磁半导体晶体发育比较好,通过UV/vis测试可以观察到Cr离子的吸收峰,说明实现了掺杂。EDS分析确定了Cr^(3+)的含量。从固溶体离子半径比、结构、离子价位和电负性分析,过渡元素Cr^(3+)在基质晶体Zn O中的固溶度是有限的,增加Cr^(3+)的含量会导致杂质相的出现,不利于形成纯净的Zn_(1-x)Cr_xO。不等价置换固溶体会产生组分缺陷,形成空位或电子空穴,在材料的电性能方面有重要意义。Zn0.9Cr0.1O diluted magnetic semiconductor was prepared by hydrothermal method using ZnCl3 and CrC13 asraw materials and NaOH of 3 mol/L as mineralizer at 260 ℃ . X-ray diffraction indicate that the Zn0.9Cr0.1O crystalhas the structure of pure ZnO, the absorption peaks of Cr-doped nanopowders have been demonstrated by UV-Visanalysis. The content of Cr3 was determined by EDS. The solid solubility of transition element Cr3 in the matrixcrystal in ZnO is limited from the analysis of ion radius ratio, structure, ion price and electro negativity. Increasingthe content of Cr3 can only lead to the appearance of impurity phase. Component defect will appear after non-equivalent replacement of solid solution, generating vacancy or electron hole having a certain freedom of activity,which has an important significance in the electrical properties of the material.
关 键 词:zn0.9Cr0.1O 离子置换 组分缺陷 电子空穴
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