薄膜衰减器的设计及性能研究  

Study on the Design and Property of Thin Film Attenuator

作　　者：冯毅龙 杨俊锋 丁明建 庄严 

机构地区：[1]广州天极电子科技有限公司,广东广州510288

出　　处：《广东化工》2017年第13期228-229,227,共3页Guangdong Chemical Industry

摘　　要：设计并制备了用于电压衰减的Π形和T形氮化钽薄膜衰减器,对衰减器的设计值与实测值进行了对比。Π形设计时,实测衰减值与设计值之间的相对误差随着设计值的提高不断下降,衰减值为-10 d B时,相对误差为8.9%,衰减值为-30 d B时,相对误差为2.47%。T形设计时,实测衰减值与设计值之间的相对误差随着设计值的提高先下降,然后再上升,-20 d B时,相对误差最小,为4.75%。FI type and T type tantalum nitride thin film attenuators used for voltage attenuated were designed and prepared. The actual attenuation of these attenuators was measured. The results indicated that the relative attenuation error of the attenuator designed by II type gradually decreased with the increasing of designed attenuation. When the designed attenuation was -10 dB, the relative error was 8.9 % and when it was -30 dB, the relative error was 2.47 %. The relative error designed by T type decreased with the increasing of designed attenuation firstly, then increased. When the dasigned attenuation was -20 dB, the minimum relative error was got, it was 4.75 %.

关 键 词：薄膜 衰减器 氮化钽 方阻 

分 类 号：TN61[电子电信—电路与系统]