金属-铁电层(BNT)-绝缘层(YSZ)-半导体(Si)二极管的存储特性及可靠性研究  

Memory Properties and Reliability of Metal-Ferroelectric(Bi_(3.15)Nd_(0.85)Ti_3O_(12))-Insulator(YSZ)-Silicon Diode

作　　者：粟诗雨 宋宏甲 钟向丽[1] 张溢[1] 王金斌[1] 

机构地区：[1]湘潭大学材料科学与工程学院,湘潭411105

出　　处：《现代应用物理》2017年第2期62-66,共5页Modern Applied Physics

基　　金：国家自然科学基金资助项目(51572233;61574121)

摘　　要：制备了金属-铁电层-绝缘层-半导体(Pt/Bi_(3.15)Nd_(0.85)T_i3O_(12)/YSZ/Si,MFIS)二极管,研究了该二极管的存储窗口电压、疲劳特性和高温保持特性。结果表明:该二极管的存储窗口电压随扫描电压的增大呈先增大后减小的趋势,其中最大存储窗口电压约为0.88V且存储窗口电压的变化几乎不受扫描电压的扫描速度与频率的影响;该二极管在109次翻转循环后,其积累电容和耗尽电容基本没有变化,且存储窗口电压仅下降了5%。另外,该二极管在80℃下加速测量8h(相当于常温下测量60d)后,加速后器件的电容差比加速前降低了13%,说明该二极管抗疲劳特性和高温特性良好。A metal-ferroelctric-insulator semiconductor diode with Bi3.15Nd0.85Ti3O12（BNT）as a ferroelectric film and Y2O3-stabilized ZrO2（YSZ）as an insulating buffer layer is fabricated,and the memory window voltage,fatigue and retention characteristics of the diode are also investigated.The results show that the memory window voltages of Pt/BNT/YSZ/Si diode increase first and then decrease with the increase of the sweeping voltages.The maximum memory window voltage is 0.88 V,and it is almost unaffected by the sweeping speed and frequency of the sweeping voltage.The accumulated capacitance and the depletion capacitance of the diode have no change after 10^9 switching cycles,and the memory window voltage is only decreased by 5%.Moreover,the capacitance difference is reduced by only 13% after meausuring 8h at 80℃.It shows that the diode has high fatigue and retention characteristics.

关 键 词：铁电存储器 MFIS 存储窗口 疲劳 保持 BNT 

分 类 号：TN384[电子电信—物理电子学]