Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition  

作　　者：Gonglan Ye Yongji Gong Sidong Lei Yongmin He Bo Li Xiang Zhang Zehua Jin Liangliang Dong Jun Lou Robert Vajtai Wu Zhou Pulickel M. Ajayan 

机构地区：[1]Department of Materials Science & NanoEngineering, Rice University, Houston, Texas 77005, USA [2]Department of Chemistry, Rice University, Houston, Texas 77005, USA [3]Department of Applied Physics, Rice University, Houston, Texas 77005, USA [4]Materials Science & Technology Division, Oak Ridge National Lab, Oak Ridge, TN 37831, USA [5]School of Materials Science and Engineering, Beihang University, Beijing 100191, China

出　　处：《Nano Research》2017年第7期2386-2394,共9页纳米研究（英文版）

摘　　要：Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition （CVD） growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition （CVD） growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.

关 键 词：metal dichalcogenides tin disulfide two-dimensional materials chemical vapor deposition PHOTODETECTOR 

分 类 号：O484.1[理学—固体物理] TN405.982[理学—物理]