碳基分子器件中可控的Fano效应  

Controlled Fano Effects in Carbon-based Molecular Devices

作　　者：杨希峰[1] 况亚伟[1] 张德宝[1] 于海林[1] 冯金福[1] 刘玉申[1] 

机构地区：[1]常熟理工学院物理与电子工程学院,江苏常熟215500

出　　处：《常熟理工学院学报》2017年第4期25-27,共3页Journal of Changshu Institute of Technology

基　　金：国家自然科学基金面上项目"具有边缘态无金属层状纳米结构器件自旋热电性能增强机制的研究"(61674022)

摘　　要：Fano效应是介观体系中一种重要的量子现象,它源于局域态与扩展态之间的量子干涉行为.通过共价键并苯分子可连接到锯齿型石墨烯纳米带而构成全碳分子器件.随着分子长度增加,扩展态可逐渐向费米面靠近并转换为局域态,进而在局域态附近观测到Fano效应.通过施加门电压,可有效调控Fano效应,并在费米面处可获得具有正/负100%的自旋极化率的半金属性质.A Fano effect is an important quantum phenomenon in mesoscopic systems, which arises from an interference between the localized state and the extended state. By covalent coupling, the acene molecule can be linked to zigzag graphene nanoribbon （ZGNR） electrodes, forming an all-carbon molecular device. As the length of the molecule increases, an extended state is gradually shifted towards Femi level, and evolves into a localized state. A Fano effect is observed near the localized state. Using a gate voltage, we can easily tune the Fano effect, and a half-metallic property with positive or negative 100% spin polarization at the Fermi level can be achieved.

关 键 词：碳基分子器件 Fano效应 半金属性质 

分 类 号：O437[机械工程—光学工程]